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Samsung enters mass production of DDR4 memory

Press release; Jessie Shen, DIGITIMES [Monday 2 September 2013]

Samsung Electronics has announced that it is mass producing DDR4 memory for enterprise servers in next-generation data centers.

In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly. By adopting DDR4 memory technology early, OEMs can minimize operational costs and maximize performance to provide more favorable returns on investments.

Early market availability of the 4Gb DDR4 devices, which use 20nm-class process technology, will facilitate demand for 16GB and 32GB memory modules, Samsung indicated. This compares to conventional DRAM of which 8GB modules using a 30nm-class process technology are still commonplace.

The 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2,667Mbps – a 1.25-fold increase over 20nm-class DDR3, while lowering power consumption by more than 30%, Samsung noted.

"The adoption of ultra-high-speed DDR4 in next-generation server systems this year will initiate a push toward advanced premium memory across the enterprise," said Young-Hyun Jun, executive VP of Samsung's memory sales & marketing. "After providing cutting-edge performance with our timely supply of 16GB DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4, and contribute to even greater growth of the green IT market in 2014."

Production of Samsung's 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, culminating in a full-fledged transition to DDR4 for large-scale data centers and other enterprise applications in just five years.

Samsung 20nm DDR4 memory
Photo: Company

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